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KAIST Annual R&D Report

Development of high speed, low-power non-volatile MRAM devies

Writer : GULF Date : 2017-09-21 Hit : 1562 Email : jsoh33@kaist.ac.kr
Author : Byoung-Guk Park Publication Date : 2016
Summary:
We tackled this critical challenge by introducing an antiferromagnetic material that generates a sizeble SOT effect as well as an exchange-bias field, allowing for successful data writing without an external magnetic field.
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